Patent · US Active

Semiconductor device including a heat sink structure

US10403556B2 · kind B2 · utility

0Cited by

0References

23Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Johannes Georg Laven · Taufkirchen, DE
Peter Irsigler · Ried im Innkreis, AT
Joachim Mahler · Regensburg, DE
Guenther Ruhl · Regensburg, DE
Hans-Joachim Schulze · Taufkirchen, DE
Markus Zundel · Egmating, DE

Key dates

Filing date	Dec 16, 2016
Grant date	Sep 3, 2019
Priority date	—
Expiry date	Dec 27, 2036

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S977/753
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a drift structure formed in a semiconductor body. The drift structure forms a first pn junction with a body zone of a transistor cell. A gate structure extends from a first surface of the semiconductor body into the drift structure. A heat sink structure extends from the first surface into the drift structure. A thermal conductivity of the heat sink structure is greater than a thermal conductivity of the gate structure and/or a thermal capacity of the heat sink structure is greater than a thermal capacity of the gate structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.