Interconnect structure with nitrided barrier
US10403575B2 · kind B2 · utility
1Cited by
0References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2017 |
| Grant date | Sep 3, 2019 |
| Priority date | — |
| Expiry date | Jan 27, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76856
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor device interconnect structures comprising nitrided barriers are disclosed herein. In one embodiment, an interconnect structure includes a conductive material at least partially filling an opening in a semiconductor substrate, and a nitrided barrier between the conductive material and a sidewall in the opening. The nitrided barrier comprises a nitride material and a barrier material, such as tantalum, between the nitride material and the sidewall of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.