Direct bonding method
US10403597B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2016 |
| Grant date | Sep 3, 2019 |
| Priority date | — |
| Expiry date | Sep 10, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0536
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bonding between a first substrate and a second substrate, the method includes the steps of: a) providing the first substrate and the second substrate, b) forming a first bonding layer having tungsten oxide on the first substrate and a second bonding layer having tungsten oxide on the second substrate, at least one of the first bonding layer and of the second bonding layer including a third element M so as to form an MWxOy-type alloy, the atomic content of M in the composition of the alloy being between 0.5 and 20% and preferably between 1 and 10%, c) carrying out a direct bonding between the first bonding layer and the second bonding layer, and d) performing a heat treatment at a temperature greater than 250° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.