Semiconductor device and dielectric film
US10403815B2 · kind B2 · utility
6Cited by
1References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 3, 2015 |
| Grant date | Sep 3, 2019 |
| Priority date | — |
| Expiry date | Dec 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device according to an embodiment includes a first conductive layer, a second conductive layer, and a ferroelectric film or a ferrielectric film provided between the first conductive layer and the second conductive layer, the ferroelectric film or the ferrielectric film including hafnium oxide containing at least one first element selected from Zn, Mg, Mn, Nb, Sc, Fe, Cr, Co, In, Li and N.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.