Patent · US Active

Using bias RF pulsing to effectively clean electrostatic chuck (ESC)

US10410845B2 · kind B2 · utility

0Cited by

3References

20Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Kenny L. Doan · San Jose, US
Usama Dadu · Hollister, US
Wonseok Lee · Atlantic Highlands, US
Daisuke Shimizu · Saratoga, US
Li Ling · Hong Kong, CN
Kevin Choi · San Jose, US

Key dates

Filing date	Nov 22, 2017
Grant date	Sep 10, 2019
Priority date	—
Expiry date	Nov 22, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/6831
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

Embodiments include a plasma processing method for cleaning polymer byproducts from interior surfaces of the plasma chamber. In an embodiment the plasma process may include processing a workpiece in a plasma processing chamber. Thereafter, the method may include removing the workpiece from the processing chamber. After the workpiece is removed, embodiments may include cleaning the plasma processing chamber with a cleaning process that includes a high pressure cleaning process, a first low pressure cleaning process, and a second low pressure cleaning process, wherein the second low pressure cleaning process includes applying a pulsed bias.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.