CVD based oxide-metal multi structure for 3D NAND memory devices

US10410869B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Susmit Singha Roy · Sunnyvale, US
• Kelvin Chan · San Ramon, US
• Hien Minh Le · San Jose, US
• Sanjay Kamath · Fremont, US
• Abhijit Basu Mallick · Palo Alto, US
• Srinivas Gandikota · Santa Clara, US
• Karthik Janakiraman · San Jose, US

Key dates

• Filing date: Jun 26, 2017
• Grant date: Sep 10, 2019
• Expiry date: Aug 18, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B43/27
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Implementations described herein generally relate to a method for forming a metal layer and to a method for forming an oxide layer on the metal layer. In one implementation, the metal layer is formed on a seed layer, and the seed layer helps the metal in the metal layer nucleate with small grain size without affecting the conductivity of the metal layer. The metal layer may be formed using plasma enhanced chemical vapor deposition (PECVD) and nitrogen gas may be flowed into the processing chamber along with the precursor gases. In another implementation, a barrier layer is formed on the metal layer in order to prevent the metal layer from being oxidized during subsequent oxide layer deposition process. In another implementation, the metal layer is treated prior to the deposition of the oxide layer in order to prevent the metal layer from being oxidized.