Patent · US Active

Buried insulator regions and methods of formation thereof

US10410911B2 · kind B2 · utility

0Cited by

14References

16Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Carsten Schaeffer · Annenheim, AT
Andreas Moser · Cugnaux, FR
Matthias Kuenle · Villach, AT
Matteo Dainese · Munich, DE
Roland Rupp · Achern, DE
Hans-Joachim Schulze · Taufkirchen, DE

Key dates

Filing date	Dec 6, 2017
Grant date	Sep 10, 2019
Priority date	—
Expiry date	Dec 18, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/83
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of fabricating a semiconductor device includes forming a buried insulation region within a substrate by processing the substrate using etching and deposition processes. A semiconductor layer is formed over the buried insulation region at a first side of the substrate. Device regions are formed in the semiconductor layer. The substrate is thinned from a second side of the substrate to expose the buried insulation region. The buried insulation region is selectively removed to expose a bottom surface of the substrate. A conductive region is formed under the bottom surface of the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.