Optical measuring method for semiconductor wafer including a plurality of patterns and method of manufacturing semiconductor device using optical measurement
US10410937B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2018 |
| Grant date | Sep 10, 2019 |
| Priority date | — |
| Expiry date | Jul 16, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device comprising: obtaining a raw light signal by selecting a predetermined wavelength band of light reflected from a wafer on which a plurality of patterns are formed; converting the raw light signal into a frequency domain; obtaining a first detection signal having a first frequency band from the raw light signal converted into the frequency domain; obtaining a second detection signal having a second frequency band from the raw light signal converted into the frequency domain, the second frequency band being different from the first frequency band; obtaining a representative value using the first detection signal, the representative value representing a profile of the plurality of patterns; and obtaining a distribution value using the second detection signal, the distribution value representing a profile of the plurality of patterns using the second detection signal. The method may include determining whether the representative value and the distribution value are within predetermined ranges respectively; and performing a following step of manufacturing the semiconductor device when the representative value and the distribution value are…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.