Semiconductor device with integrated heat distribution and manufacturing method thereof
US10410999B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2017 |
| Grant date | Sep 10, 2019 |
| Priority date | — |
| Expiry date | Dec 19, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor package having an internal heat distribution layer and methods of forming the semiconductor package are provided. The semiconductor package can include a first semiconductor device, a second semiconductor device, and an external heat distribution layer. The first semiconductor device can comprise a first semiconductor die and an external surface comprising a top surface, a bottom surface, and a side surface joining the bottom surface to the tope surface. The second semiconductor device can comprise a second semiconductor die and can be stacked on the top surface of the first semiconductor device. The external heat distribution layer can cover an external surface of the second semiconductor device and the side surface of the first semiconductor device. The external heat distribution layer further contacts an internal heat distribution layer on a top surface of the first semiconductor die.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.