Multi-component conductive structures for semiconductor devices
US10411017B2 · kind B2 · utility
1Cited by
6References
5Claims
0Family size
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Key dates
| Filing date | Aug 31, 2017 |
| Grant date | Sep 10, 2019 |
| Priority date | — |
| Expiry date | Sep 18, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53252
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Described are methods for forming multi-component conductive structures for semiconductor devices. The multi-component conductive structures can include a common metal, present in different percentages between the two components of the conductive structures. As described example, multiple components can include multiple ruthenium materials having different percentages of ruthenium. In some applications, at least a portion of one of the ruthenium material components will be sacrificial, and removed in subsequent processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.