Etching method using remote plasma source, and method of fabricating semiconductor device including the etching method
US10418250B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Jan 12, 2018 |
| Grant date | Sep 17, 2019 |
| Priority date | — |
| Expiry date | Jan 12, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching method using a remote plasma source (RPS) and a method of fabricating a semiconductor device, the etching method including generating a plasma by supplying a process gas to at least one RPS and applying power to the at least one RPS; and etching a first material film including SiNx by supplying the plasma and at least one control gas selected from HBr, HCl, HI, NH3, SiH4, CHF3, and CH2F2 to a process chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.