Fin field-effect transistor (FinFET) and method of production thereof
US10418285B1 · kind B1 · utility
3Cited by
7References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 30, 2018 |
| Grant date | Sep 17, 2019 |
| Priority date | — |
| Expiry date | May 30, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0158
Abstract
Methods of forming a CT pillar with reduced width and increased distance from neighboring fins and the resulting devices are provided. Embodiments include providing a first pair of fins and a second pair of fins in an oxide layer, wherein the first and second pair of fins include Si; and forming a CT pillar including SiN between the first and second pair of fins and over a portion of the oxide layer, wherein width of the CT pillar and distance between the CT pillar and the first and second pair of fins are inversely proportional.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.