Patent · US Active

Semiconductor device and method of forming partition fence and shielding layer around semiconductor components

US10418332B2 · kind B2 · utility

4Cited by
4References
22Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 13, 2017
Grant dateSep 17, 2019
Priority date
Expiry dateAug 4, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/3025
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device has a partition fence disposed between a first attach area and a second attach area on a substrate. A first electrical component is disposed over the first attach area. A second electrical component is disposed over the second attach area. The partition fence extends above and along a length of the first electrical component and second electrical component. An encapsulant is deposited over the substrate, first electrical component, second electrical component, and partition fence. A portion of the encapsulant is removed to expose a surface of the partition fence and planarizing the encapsulant. A shielding layer is formed over the encapsulant and in contact with the surface of the partition fence. The combination of the partition fence and shielding layer compartmentalize the first electrical component and second electrical component for physical and electrical isolation to reduce the influence of EMI, RFI, and other inter-device interference.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.