Semiconductor device including corner recess

US10418334B2 · kind B2 · utility

Assignee

• SanDisk Semiconductor (Shanghai) Co. Ltd. · CN

Inventors

• Hang ZHANG · Chengdu, CN
• Weili Wang · Buffalo Grove, US
• Junrong Yan · Shanghai, CN
• Kim Lee Bock · Shanghai, CN
• Chee Keong Chin · Shanghai, CN
• Chong Un Tan · Kuala Pilah, MY
• Xin Tian · Beijing, CN

Key dates

• Filing date: Jun 22, 2017
• Grant date: Sep 17, 2019
• Expiry date: Jun 22, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/117
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor die is disclosed including corner recesses to prevent cracking of the semiconductor die during fabrication. Prior to dicing the semiconductor die from the wafer, recesses may be formed in the wafer at corners between any pair of semiconductor die. The recesses may be formed by a laser or photolithographic processes in the kerf area between semiconductor die. Once formed, the corner recesses prevent cracking and damage to semiconductor die which could otherwise occur at the corners of adjacent semiconductor die as the adjacent semiconductor die move relative to each other during the backgrind process.