Light-emitting device with integrated light sensor
US10418506B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2016 |
| Grant date | Sep 17, 2019 |
| Priority date | — |
| Expiry date | Sep 9, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/142
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light-emitting device including a substrate at least partially doped with a first type of conductivity and including a face; light-emitting diodes each including at least one three-dimensional semiconducting element which is undoped or doped with the first type of conductivity and resting on the said face; and semiconducting regions forming photodiodes, at least partially doped with a second type of conductivity opposite to the first type of conductivity and extending in the substrate from the said face between at least some of the three-dimensional semiconducting elements, a portion of the substrate of first type of conductivity extending up to the said face at the level of each three-dimensional semiconducting element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.