Hardmask composition, method of forming pattern using the hardmask composition, and hardmask formed from the hardmask composition
US10424490B2 · kind B2 · utility
3Cited by
0References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 7, 2017 |
| Grant date | Sep 24, 2019 |
| Priority date | — |
| Expiry date | Nov 7, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/094
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a hardmask composition and a method of forming a fine pattern using the hardmask composition, the hardmask composition including a solvent, a 2D carbon nanostructure (and/or a derivative thereof), and a 0D carbon nanostructure (and/or a derivative thereof).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.