Minsu SEOL
44Patents
3h-index
47Co-inventors
55Inventor score
Filing activity: Aug 13, 2015 → Jul 2, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10199958B2 | Triboelectric generator | Electricity | 8 | Active |
| US10014799B2 | Triboelectric generator | Electricity | 4 | Active |
| US11588034B2 | Field effect transistor including gate insulating layer formed of two-dimensional material | Electricity | 3 | Active |
| US10424490B2 | Hardmask composition, method of forming pattern using the hardmask composition, and hardmask formed from the hardmask composition | Physics | 3 | Active |
| US10770990B2 | Triboelectric generator | Electricity | 3 | Active |
| US10873277B2 | Triboelectric generator | Electricity | 2 | Active |
| US9905422B2 | Two-dimensional material hard mask, method of manufacturing the same, and method of forming material layer pattern using the hard mask | Electricity | 2 | Active |
| US10551735B2 | Pellicle composition for photomask, pellicle for photomask formed from the pellicle composition, method of forming the pellicle, reticle including the pellicle, and exposure apparatus for lithography including the reticle | Physics | 2 | Active |
| US10928723B2 | Pellicle for photomask, reticle including the same, and exposure apparatus for lithography | Electricity | 2 | Active |
| US11086223B2 | Hardmask composition and method of forming pattern using the hardmask composition | Performing Operations; Transporting | 1 | Active |
| US11532709B2 | Field effect transistor including channel formed of 2D material | Electricity | 1 | Active |
| US10681464B2 | Acoustic diaphragm including graphene and acoustic device employing the same | Electricity | 1 | Active |
| US11563116B2 | Vertical type transistor, inverter including the same, and vertical type semiconductor device including the same | Electricity | 1 | Active |
| US10777412B2 | Hardmask composition, method of preparing the same, and method of forming patterned layer by using the hardmask composition | Emerging Cross-Sectional Technologies | 0 | Active |
| US12027588B2 | Field effect transistor including channel formed of 2D material | Electricity | 0 | Active |
| US11034847B2 | Hardmask composition, method of forming pattern using hardmask composition, and hardmask formed from hardmask composition | Electricity | 0 | Active |
| US11508814B2 | Transistor including two-dimensional (2D) channel | Electricity | 0 | Active |
| US11404182B2 | Conductive composite structure for electronic device, method of preparing the same, electrode for electronic device including the conductive composite structure, and electronic device including the conductive composite structure | Emerging Cross-Sectional Technologies | 0 | Active |
| US12191392B2 | Semiconductor device including two-dimensional material | Electricity | 0 | Active |
| US12341063B2 | Interconnect structure, electronic device including the same, and method of manufacturing interconnect structure | Electricity | 0 | Active |
| US11935790B2 | Field effect transistor and method of manufacturing the same | Electricity | 0 | Active |
| US11431265B2 | Triboelectric generator | Electricity | 0 | Active |
| US12356668B2 | Field effect transistor including channels having a hollow closed cross-sectional structure and method of manufacturing the same | Electricity | 0 | Active |
| US10808142B2 | Method of preparing graphene quantum dot, hardmask composition including the graphene quantum dot obtained by the method, method of forming patterns using the hardmask composition, and hardmask formed from the hardmask composition | Emerging Cross-Sectional Technologies | 0 | Active |
| US12122732B2 | Functionalized polycyclic aromatic hydrocarbon compound and light-emitting device including the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.