Method for manufacturing a dual work function semiconductor device and the semiconductor device made thereof
US10424517B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 13, 2016 |
| Grant date | Sep 24, 2019 |
| Priority date | — |
| Expiry date | Jun 13, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a dual work function semiconductor device includes forming a first silicon oxide layer on a substrate and forming a first hafnium-containing dielectric material layer on the first silicon oxide layer. The method further includes forming an aluminum-containing dielectric material layer on the first hafnium-containing dielectric material layer and performing a thermal treatment to intermix the silicon oxide layer, the first hafnium-containing dielectric material layer and the aluminum-containing dielectric material layers. This results in an intermixing dielectric layer containing hafnium, aluminum, silicon, and oxygen. The method further includes forming a first metal-containing conductive layer on the intermixing dielectric layer and patterning the first metal-containing conductive layer and the intermixing dielectric layer, thereby forming a first gate stack in a first region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.