Thomas Hoffman
6Patents
2h-index
14Co-inventors
44Inventor score
Filing activity: Jun 12, 2003 → Jun 13, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6982433B2 | Gate-induced strain for MOS performance improvement | Electricity | 43 | Expired |
| US8482043B2 | Method for improving transistor performance through reducing the salicide interface resistance | Emerging Cross-Sectional Technologies | 2 | Active |
| US9437710B2 | Method for improving transistor performance through reducing the salicide interface resistance | Emerging Cross-Sectional Technologies | 1 | Active |
| US10424517B2 | Method for manufacturing a dual work function semiconductor device and the semiconductor device made thereof | Electricity | 1 | Active |
| US9202889B2 | Method for improving transistor performance through reducing the salicide interface resistance | Emerging Cross-Sectional Technologies | 0 | Active |
| US8912055B2 | Method for manufacturing a hybrid MOSFET device and hybrid MOSFET obtainable thereby | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.