Patent · US Active

Method and apparatus to prevent deposition rate/thickness drift, reduce particle defects and increase remote plasma system lifetime

US10428426B2 · kind B2 · utility

5Cited by

15References

20Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Daemian Raj · Sunnyvale, US
Ying Ma · Shanghai, CN
Dongqing Li · Beijing, CN
Jay D. Pinson, II · San Jose, US

Key dates

Filing date	Apr 21, 2017
Grant date	Oct 1, 2019
Priority date	—
Expiry date	Apr 12, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH01J37/32899
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A method and apparatus for a deposition chamber is provided and includes a twin chamber that includes a first remote plasma system coupled and dedicated to a first processing region, a second remote plasma system coupled and dedicated to a second processing region, and a third remote plasma system shared by the first processing region and the second processing region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.