Photo-sensitized chemically amplified resist (PS-CAR) simulation
US10429745B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 19, 2016 |
| Grant date | Oct 1, 2019 |
| Priority date | — |
| Expiry date | Jan 19, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/095
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Methods and systems for PS-CAR photoresist simulation are described. In an embodiment, a method includes determining by simulation at least one process parameter of a lithography process using a radiation-sensitive material. In such an embodiment, the radiation-sensitive material includes: a first light wavelength activation threshold that controls the generation of acid to a first acid concentration in the radiation-sensitive material and controls generation of photosensitizer molecules in the radiation-sensitive material, and a second light wavelength activation threshold that can excite the photosensitizer molecules in the radiation-sensitive material that results in the acid comprising a second acid concentration that is greater than the first acid concentration, the second light wavelength being different from the first light wavelength. In such an embodiment, the method also includes performing a lithography process using the previously-determined at least one process parameter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.