Gas plenum arrangement for improving etch non-uniformity in transformer-coupled plasma systems
US10431426B2 · kind B2 · utility
0Cited by
7References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 12, 2016 |
| Grant date | Oct 1, 2019 |
| Priority date | — |
| Expiry date | Jul 27, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A gas plenum arrangement for a substrate processing system includes a gas plenum body arranged to define a gas plenum between a coil and a processing chamber. The coil is arranged outside of an outer edge of the gas plenum body. A plurality of flux attenuating portions is arranged outside of the outer edge of the gas plenum body. The flux attenuation portions overlap the coil.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.