Titanium target for sputtering and manufacturing method thereof
US10431438B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Mar 3, 2014 |
| Grant date | Oct 1, 2019 |
| Priority date | — |
| Expiry date | Mar 3, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3414
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A high-purity titanium target for sputtering having a purity of 5N5 (99.9995%) or higher, wherein the high-purity titanium target has no macro pattern on the target surface. An object of this invention is to provide a high-quality titanium target for sputtering, in which impurities causing particles and abnormal discharge phenomena are reduced, and which is free from fractures and cracks even during high-rate sputtering, and capable of stabilizing the sputtering characteristics, effectively inhibiting the generation of particles during deposition, and improving the uniformity of deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.