Tantalum sputtering target
US10431439B2 · kind B2 · utility
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18References
1Claims
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Key dates
| Filing date | Sep 26, 2014 |
| Grant date | Oct 1, 2019 |
| Priority date | — |
| Expiry date | Oct 15, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3423
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A tantalum sputtering target containing niobium and tungsten as essential components in a total amount of 1 massppm or more and less than 10 massppm, and having a purity of 99.9999% or higher excluding niobium, tungsten and gas components. Provided is a high purity tantalum sputtering target comprising a uniform and fine structure which is adjusted to be within an optimal range and which enables deposition of a uniform film at a high deposition rate in a stable manner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.