Doping control of metal nitride films
US10431493B2 · kind B2 · utility
4Cited by
5References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 25, 2018 |
| Grant date | Oct 1, 2019 |
| Priority date | — |
| Expiry date | May 25, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.