Inventor · Ann Arbor, MI, US

Guodan Wei

14Patents
3h-index
14Co-inventors
53Inventor score

Filing activity: Nov 13, 2006 → Jan 7, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US7750425B2 Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier Emerging Cross-Sectional Technologies 30 Active
US8828866B1 Methods for depositing a tantalum silicon nitride film Electricity 7 Active
US10431493B2 Doping control of metal nitride films Electricity 4 Active
US10487399B2 Atomic layer deposition chamber with counter-flow multi inject Chemistry; Metallurgy 3 Active
US10008412B2 Doping control of metal nitride films Electricity 2 Active
US10333079B2 Organic photosensitive devices comprising aryl squaraines and methods of making the same Emerging Cross-Sectional Technologies 2 Active
US10982326B2 Counter-flow multi inject for atomic layer deposition chamber Chemistry; Metallurgy 2 Active
US9659814B2 Doping control of metal nitride films Electricity 2 Active
US7915521B2 Type II quantum dot solar cells Emerging Cross-Sectional Technologies 1 Active
US11944007B2 Organic photosensitive devices comprising aryl squaraines and methods of making the same Emerging Cross-Sectional Technologies 1 Active
US10910263B2 Doping control of metal nitride films Electricity 0 Active
US9768402B2 Enhanced bulk heterojunction devices prepared by thermal and solvent vapor annealing processes Emerging Cross-Sectional Technologies 0 Active
US11587829B2 Doping control of metal nitride films Electricity 0 Active
US9460932B2 Surface poisoning using ALD for high selectivity deposition of high aspect ratio features Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.