Patent · US Active

Method of manufacturing semiconductor devices by bonding a semiconductor disk on a base substrate, composite wafer and semiconductor device

US10431504B2 · kind B2 · utility

2Cited by

3References

12Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Wolfgang Lehnert · Lintach, DE
Rudolf Berger · Munich, DE
Albert Birner · Regensburg, DE
Helmut Brech · Lappersdorf, DE
Oliver Häberlen · Villach, AT
Guenther Ruhl · Regensburg, DE
Roland Rupp · Achern, DE

Key dates

Filing date	Feb 25, 2016
Grant date	Oct 1, 2019
Priority date	—
Expiry date	Aug 16, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/018
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor disk of a first crystalline material, which has a first lattice system, is bonded on a process surface of a base substrate, wherein a bonding layer is formed between the semiconductor disk and the base substrate. A second semiconductor layer of a second crystalline material with a second, different lattice system is formed by epitaxy on a first semiconductor layer formed from the semiconductor disk.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.