Inventor · Regensburg, DE

Albert Birner

63Patents
8h-index
43Co-inventors
78Inventor score

Filing activity: May 31, 2001 → Jan 5, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US7081384B2 Method of forming a silicon dioxide layer Emerging Cross-Sectional Technologies 51 Expired
US7772123B2 Through substrate via semiconductor components Electricity 29 Active
US6559069B2 Process for the electrochemical oxidation of a semiconductor substrate Electricity 25 Expired
US8399936B2 Through substrate via semiconductor components Electricity 20 Active
US8227340B2 Method for producing a copper connection between two sides of a substrate Electricity 15 Active
US7192830B2 Method for fabricating a memory cell Electricity 11 Expired
US6919255B2 Semiconductor trench structure Electricity 10 Expired
US9997443B2 Through vias and methods of formation thereof Electricity 9 Active
US6660582B2 Method of forming a vertical field-effect transistor device Electricity 6 Expired
US7268381B2 Memory cell with trench capacitor and vertical select transistor and an annular contact-making region formed between them Electricity 6 Expired
US6878600B2 Method for fabricating trench capacitors and semiconductor device with trench capacitors Electricity 6 Expired
US6861312B2 Method for fabricating a trench structure Electricity 5 Expired
US6863769B2 Configuration and method for making contact with the back surface of a semiconductor substrate Electricity 5 Expired
US7157371B2 Barrier layer and a method for suppressing diffusion processes during the production of semiconductor devices Electricity 5 Expired
US9991373B1 Semiconductor device Electricity 4 Active
US7084043B2 Method for forming an SOI substrate, vertical transistor and memory cell with vertical transistor Electricity 4 Expired
US9543260B2 Segmented bond pads and methods of fabrication thereof Electricity 4 Active
US9929107B1 Method for manufacturing a semiconductor device Electricity 4 Active
US8035140B2 Method and layout of semiconductor device with reduced parasitics Electricity 3 Active
US9147610B2 Monitor structures and methods of formation thereof Electricity 2 Active
US8815743B2 Through substrate via semiconductor components and methods of formation thereof Electricity 2 Active
US10431504B2 Method of manufacturing semiconductor devices by bonding a semiconductor disk on a base substrate, composite wafer and semiconductor device Electricity 2 Active
US10622284B2 LDMOS transistor and method Electricity 2 Active
US9530720B2 Monitor structures and methods of formation thereof Electricity 1 Active
US7385256B2 Transistor arrangement in monocrystalline substrate having stress exerting insulators Electricity 1 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.