Helmut Brech
37Patents
4h-index
19Co-inventors
60Inventor score
Filing activity: Jul 31, 2002 → Jan 5, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6870219B2 | Field effect transistor and method of manufacturing same | Electricity | 18 | Expired |
| US9997443B2 | Through vias and methods of formation thereof | Electricity | 9 | Active |
| US9991373B1 | Semiconductor device | Electricity | 4 | Active |
| US9543260B2 | Segmented bond pads and methods of fabrication thereof | Electricity | 4 | Active |
| US9929107B1 | Method for manufacturing a semiconductor device | Electricity | 4 | Active |
| US10622284B2 | LDMOS transistor and method | Electricity | 2 | Active |
| US10629575B1 | Stacked die semiconductor package with electrical interposer | Electricity | 2 | Active |
| US10431504B2 | Method of manufacturing semiconductor devices by bonding a semiconductor disk on a base substrate, composite wafer and semiconductor device | Electricity | 2 | Active |
| US7126192B2 | Transistor with reduced gate-to-source capacitance and method therefor | Electricity | 1 | Expired |
| US10707818B1 | RF amplifier with impedance matching components monolithically integrated in transistor die | Electricity | 1 | Active |
| US10629727B2 | Method of manufacturing a semiconductor device including an LDMOS transistor | Electricity | 1 | Active |
| US7026204B2 | Transistor with reduced gate-to-source capacitance and method therefor | Electricity | 1 | Expired |
| US10304789B2 | LDMOS transistor structure and method of manufacture | Electricity | 0 | Active |
| US10050139B2 | Semiconductor device including a LDMOS transistor and method | Electricity | 0 | Active |
| US10026806B2 | Semiconductor device including an LDMOS transistor and a RESURF structure | Electricity | 0 | Active |
| US11581418B2 | Selective thermal annealing method | Electricity | 0 | Active |
| US12087830B2 | Group III nitride device and method of fabricating a Group III nitride-based device | Electricity | 0 | Active |
| US10672686B2 | LDMOS transistor and method | Electricity | 0 | Active |
| US10665531B2 | LDMOS transistor | Electricity | 0 | Active |
| US11929405B2 | Group III nitride-based transistor device having a field plate | Electricity | 0 | Active |
| US10403724B2 | Semiconductor wafer | Electricity | 0 | Active |
| US9960229B2 | Semiconductor device including a LDMOS transistor | Electricity | 0 | Active |
| US9634085B1 | Semiconductor device including a LDMOS transistor | General | 0 | Revoked |
| US11869963B2 | Semiconductor device and method of fabricating a semiconductor device | Electricity | 0 | Active |
| US11817482B2 | Semiconductor device and method | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.