Semiconductor device and method for forming the same
US10431679B2 · kind B2 · utility
2Cited by
4References
8Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Apr 1, 2018 |
| Grant date | Oct 1, 2019 |
| Priority date | — |
| Expiry date | Apr 1, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and at least a gate trench extending along a first direction formed in the substrate. A gate dielectric layer is formed conformally covering the gate trench. A gate metal is formed on the gate dielectric layer and filling the gate trench. A plurality of intervening structures are arranged along the first direction in a lower portion of the gate trench and disposed between the gate metal and the gate dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.