Graphite crucible for sublimation growth of SiC crystal
US10435810B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2017 |
| Grant date | Oct 8, 2019 |
| Priority date | — |
| Expiry date | Jan 30, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24273
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming an SiC crystal including placing in an insulated graphite container a seed crystal of SiC, and supporting the seed crystal on a shelf, wherein cushion rings contact the seed crystal on a periphery of top and bottom surfaces of the seed crystal, and where the graphite container does not contact a side surface of the seed crystal; placing a source of Si and C atoms in the insulated graphite container, where the source of Si and C atoms is for transport to the seed crystal to grow the SiC crystal; placing the graphite container in a furnace; heating the furnace; evacuating the furnace; filling the furnace with an inert gas; and maintaining the furnace to support crystal growth to thereby form the SiC crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.