Cationically polymerizable resist underlayer film-forming composition
US10437151B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 2016 |
| Grant date | Oct 8, 2019 |
| Priority date | — |
| Expiry date | Jun 21, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/091
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There is provided a composition for forming a resist underlayer film for lithography that can be used as an underlayer anti-reflective coating that decreases the reflection of irradiated light during exposure from a semiconductor substrate toward the photoresist layer that is formed on the semiconductor substrate and in particular, can be suitably used as a flattening film for flattening a semiconductor substrate having a recess and a project by embedding, in a lithography process for production of a semiconductor device. A resist underlayer film-forming composition for lithography comprising (A) an alicyclic epoxy compound having an alicyclic skeleton and one or more epoxy groups, and a light absorption moiety, in the molecule, (B) a thermal acid generator, and (C) a solvent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.