Lithographic method
US10437154B2 · kind B2 · utility
1Cited by
26References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2017 |
| Grant date | Oct 8, 2019 |
| Priority date | — |
| Expiry date | Oct 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H9/048
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of patterning lithographic substrates, the method comprising using a free electron laser to generate EUV radiation and delivering the EUV radiation to a lithographic apparatus which projects the EUV radiation onto lithographic substrates, wherein the method further comprises reducing fluctuations in the power of EUV radiation delivered to the lithographic substrates by using a feedback-based control loop to monitor the free electron laser and adjust operation of the free electron laser accordingly.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.