Methods, apparatus and system for forming a FinFET device comprising a first portion capable of operating at a first voltage and a second portion capable of operating at a second voltage
US10438853B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 22, 2017 |
| Grant date | Oct 8, 2019 |
| Priority date | — |
| Expiry date | Nov 22, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
At least one method, apparatus and system are provided for forming a hybrid oxide layer for providing for a first region of a finFET device to operate at a first voltage and a second region of the finFET to operate at a second voltage. A first set of fins are formed on an I/O device portion, and a second set of fins are formed on a core device portion of a substrate. A first and a second oxide layers are deposited on the first and second set of fins, wherein they merge to form a hybrid oxide layer. The thickness of the second oxide layer is based on a first operating voltage for the I/O device portion. The hybrid layer is removed from the core device portion such that the I/O device portion operates at the first voltage and the core device portion operates at a second voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.