Wafer processing method
US10438898B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2017 |
| Grant date | Oct 8, 2019 |
| Priority date | — |
| Expiry date | Nov 21, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/5446
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A wafer processing method for processing a wafer has a front side and a back side, the front side of the wafer being formed with a plurality of crossing streets for defining a plurality of separate regions where a plurality of devices are individually formed. The wafer processing method includes the steps of first attaching a protective tape to the front side of the wafer, next heating the protective tape and the wafer, next applying a laser beam having a transmission wavelength to the wafer to the back side of the wafer along the streets, thereby forming a modified layer inside the wafer along each street, and next grinding the back side of the wafer, thereby reducing a thickness of the wafer to a predetermined thickness and also dividing the wafer into individual chips along each street where the modified layer is formed as a division start point.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.