Methods of fabricating magnetic tunnel junctions integrated with selectors
US10438996B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2018 |
| Grant date | Oct 8, 2019 |
| Priority date | — |
| Expiry date | Jan 8, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/24
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods of fabricating devices including arrays of integrated Magnetic Tunnel Junctions (MTJs) and corresponding selectors in an array of cells. The array of cells can include a plurality of source lines disposed in columns, set of selectors coupled to respective source lines, MJT structures coupled to respective selectors and a plurality of bit lines disposed in rows and coupled to respective sets of MTJ structures. The array of cells can also include buffers coupled between respective selectors and respective MTJ structures. In addition, multiple arrays can be fabricated on top of each other to implement vertical three-dimensional (3D) MTJ devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.