Annular vertical Si etched channel MOS devices
US10438999B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2017 |
| Grant date | Oct 8, 2019 |
| Priority date | — |
| Expiry date | Dec 29, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
Abstract
A switching device, according to one embodiment, includes: a cylindrical pillar gate contact, an annular cylindrical channel which encircles a portion of the cylindrical pillar gate contact, an annular cylindrical oxide layer which encircles a portion of the annular cylindrical channel, and a source contact tab which encircles a portion of the annular cylindrical channel toward a first end of the annular cylindrical channel. Other systems are also described in additional embodiments herein which provide various different switching devices having improved components including improved annular cylindrical channel structures, improved source contacts, and/or improved cylindrical pillar gate contacts. These improved systems and components thereof may be implemented in vertical annular transistor structures in comparison to conventional surface transistor structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.