Fins with single diffusion break facet improvement using epitaxial insulator

US10439026B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Chun Yu Wong · Ballston Lake, US
• Hui Zang · Guilderland, US
• Xusheng Wu · Hsinchu, TW

Key dates

• Filing date: Oct 17, 2017
• Grant date: Oct 8, 2019
• Expiry date: Oct 17, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/013

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to fin structures with single diffusion break facet improvement using an epitaxial insulator and methods of manufacture. The structure includes: a plurality of fin structures; an insulator material filling a cut between adjacent fin structures of the plurality of fin structures; a metal material (e.g., rare earth oxide or SrTiO3) at least partially lining the cut; and an epitaxial source region or epitaxial drain region in at least one of the plurality of fin structures and adjacent to the metal material.