Multi-gate high electron mobility transistors and methods of fabrication
US10439057B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2014 |
| Grant date | Oct 8, 2019 |
| Priority date | — |
| Expiry date | Sep 9, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A multi-gate high electron mobility transistor (HEMT) and its methods of formation are disclosed. The multi-gate HEMT includes a substrate and an adhesion layer on top of the substrate. A channel layer is disposed on top of the adhesion layer, and a first gate electrode is disposed on top of the channel layer. The first gate electrode has a first gate dielectric layer in between the first gate electrode and the channel layer. A second gate electrode is embedded within the substrate and beneath the channel layer. The second gate electrode has a second gate dielectric layer completely surrounding the second gate electrode. A pair of source and drain contacts are disposed on opposite sides of the first gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.