Thick pseudomorphic nitride epitaxial layers
US10446391B2 · kind B2 · utility
1Cited by
159References
20Claims
0Family size
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Key dates
| Filing date | Nov 17, 2011 |
| Grant date | Oct 15, 2019 |
| Priority date | — |
| Expiry date | Jun 16, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In various embodiments, a semiconductor device includes an aluminum nitride single-crystal substrate, a pseudomorphic strained layer disposed thereover that comprises at least one of AlN, GaN, InN, or an alloy thereof, and, disposed over the strained layer, a semiconductor layer that is lattice-mismatched to the substrate and substantially relaxed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.