Self-aligned nanodots for 3D NAND flash memory
US10446392B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 26, 2018 |
| Grant date | Oct 15, 2019 |
| Priority date | — |
| Expiry date | Jan 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/27
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a 3D NAND structure having self-aligned nanodots includes depositing alternating layers of an oxide and a nitride on a substrate; at least partially recessing the nitride layers; and forming SiGe nanodots on the nitride layers. A method of forming a 3D NAND structure having self-aligned nanodots includes depositing alternating layers of an oxide and a nitride on a substrate; at least partially recessing the nitride layers; and forming SiGe nanodots on the nitride layers by a process including maintaining a temperature of the substrate below about 560° C.; flowing a silicon epitaxy precursor into the chamber; forming a silicon epitaxial layer on the substrate at the nitride layers; flowing germanium gas into the chamber with the silicon epitaxy precursor; and forming a silicon germanium epitaxial layer on the substrate at the nitride layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.