Self-aligned multiple patterning processes with layered mandrels
US10446395B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2018 |
| Grant date | Oct 15, 2019 |
| Priority date | — |
| Expiry date | Apr 11, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/528
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of self-aligned multiple patterning and structures formed by self-aligned multiple patterning. A mandrel line is patterned from a first mandrel layer disposed on a hardmask and a second mandrel layer disposed over the first mandrel layer. A first section of the second mandrel layer of the mandrel line is removed to expose a first section of the first mandrel layer. The first section of the first mandrel layer is masked, and the second sections of the second mandrel layer and the underlying second portions of the first mandrel layer are removed to expose first portions of the hardmask. The first portions of the hardmask are then removed with an etching process to form a trench in the hardmask. A second portion of the hardmask is masked by the first portion of the first mandrel layer during the etching process to form a cut in the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.