Inventor · Ballston Lake, NY, US

Jinping Liu

101Patents
9h-index
191Co-inventors
83Inventor score

Filing activity: Oct 16, 1990 → May 7, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US7169675B2 Material architecture for the fabrication of low temperature transistor Electricity 149 Expired
US7109099B2 End of range (EOR) secondary defect engineering using substitutional carbon doping Electricity 99 Expired
US9105497B2 Methods of forming gate structures for transistor devices for CMOS applications Electricity 15 Active
US9159794B2 Method to form wrap-around contact for finFET Electricity 14 Active
US9553194B1 Method for improved fin profile Electricity 13 Active
US10062692B1 Field effect transistors with reduced parasitic resistances and method Electricity 13 Active
US9805982B1 Apparatus and method of adjusting work-function metal thickness to provide variable threshold voltages in finFETs Electricity 13 Active
US9455204B1 10 nm alternative N/P doped fin for SSRW scheme Electricity 13 Active
US9711447B1 Self-aligned lithographic patterning with variable spacings Electricity 9 Active
US9947769B1 Multiple-layer spacers for field-effect transistors Electricity 9 Active
US9330982B1 Semiconductor device with diffusion barrier film and method of manufacturing the same Electricity 7 Active
US8058123B2 Integrated circuit and method of fabrication thereof Electricity 7 Active
US9640423B2 Integrated circuits and methods for their fabrication Electricity 7 Active
US9589807B1 Method for eliminating interlayer dielectric dishing and controlling gate height uniformity Electricity 7 Active
US9362283B2 Gate structures for transistor devices for CMOS applications and products Electricity 6 Active
US10192780B1 Self-aligned multiple patterning processes using bi-layer mandrels and cuts formed with block masks Electricity 6 Active
US9761452B1 Devices and methods of forming SADP on SRAM and SAQP on logic Electricity 6 Active
US8012839B2 Method for fabricating a semiconductor device having an epitaxial channel and transistor having same Electricity 6 Active
US5631374A Reagents for detection of primary amines Emerging Cross-Sectional Technologies 5 Expired
US9577066B1 Methods of forming fins with different fin heights Electricity 5 Active
US9773680B1 Advanced method for scaled SRAM with flexible active pitch Electricity 5 Active
US10347541B1 Active gate contacts and method of fabrication thereof Electricity 4 Active
US8637372B2 Methods for fabricating a FINFET integrated circuit on a bulk silicon substrate Electricity 4 Active
US10312150B1 Protected trench isolation for fin-type field-effect transistors Electricity 4 Active
US10586860B2 Method of manufacturing finfet devices using narrow and wide gate cut openings in conjunction with a replacement metal gate process Electricity 4 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.