Semiconductor device and method for fabricating the same

US10446448B2 · kind B2 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Chun-Hao Lin
• Hsin-Yu Chen · Austin, US
• Chun-Tsen Lu · Baoshan, TW
• Shou-Wei Hsieh · Hsinchu, TW

Key dates

• Filing date: Oct 30, 2018
• Grant date: Oct 15, 2019
• Expiry date: Oct 30, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0158

Abstract

A semiconductor device includes: a substrate having a first region and a second region; a first fin-shaped structure on the first region and a second fin-shaped structure on the second region; a shallow trench isolation (STI) around the first fin-shaped structure and the second fin-shaped structure; a first oxide layer on the first fin-shaped structure; a second oxide layer on and directly contacting the first oxide layer and the STI; and a third oxide layer on the second fin-shaped structure, wherein a thickness of the third oxide layer is less than a thickness of the first oxide layer.