Surface modification control for etch metric enhancement
US10446453B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2018 |
| Grant date | Oct 15, 2019 |
| Priority date | — |
| Expiry date | Mar 13, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is disclosed for monitoring and controlling a process of plasma-assisted surface modification of a layer formed on a substrate. The method includes flowing a surface modification gas into a plasma processing chamber of a plasma processing system, igniting a plasma in the plasma processing chamber to initiate a surface modification process for a layer formed on a substrate, and acquiring optical emission spectra from an optical emission spectroscopy system attached to the plasma processing chamber, during the surface modification process for the layer. For one embodiment, the method includes altering at least one parameter of the surface modification process based on the acquired optical emission spectra. For one embodiment, the acquired optical emission spectra can include an intensity of a spectral line, a slope of a spectral line, or both to enable endpoint control of the surface modification process. Additional methods and related systems are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.