Method for fabricating semiconductor device
US10446667B2 · kind B2 · utility
2Cited by
13References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 7, 2019 |
| Grant date | Oct 15, 2019 |
| Priority date | — |
| Expiry date | May 7, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor device includes the steps of: forming a first gate structure on a substrate; performing a first etching process to form a recess adjacent to the first gate structure; performing an ion implantation process to form an amorphous layer directly under the recess; performing a second etching process to remove the amorphous layer; and forming an epitaxial layer in the recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.