Back-illuminated sensor with boron layer
US10446696B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2018 |
| Grant date | Oct 15, 2019 |
| Priority date | — |
| Expiry date | Oct 3, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/014
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An inspection system including an optical system (optics) to direct light from an illumination source to a sample, and to direct light reflected/scattered from the sample to one or more image sensors. At least one image sensor of the system is formed on a semiconductor membrane including an epitaxial layer having opposing surfaces, with circuit elements formed on one surface of the epitaxial layer, and a pure boron layer and a doped layer on the other surface of the epitaxial layer. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.