Patent · US Active

Write leveling a memory device

US10452319B1 · kind B1 · utility

7Cited by
0References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 26, 2018
Grant dateOct 22, 2019
Priority date
Expiry dateJun 26, 2038

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C11/4096
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A host device and memory device function together to perform internal write leveling of a data strobe with a write command within the memory device. The memory device includes a command interface configured to receive write commands from the host device. The memory device also includes an input-output interface configured to receive the data strobe from the host device. The memory device also includes internal write circuitry configured to launch an internal write signal based at least in part on the write commands. The launch of the internal write signal is based at least in part on an indication from the host device that indicates when to launch the internal write signal relative to a cas write latency (CWL) for the memory device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.