Inventor · Allen, TX, US

Liang Chen

17Patents

5h-index

7Co-inventors

55Inventor score

Filing activity: Feb 18, 2009 → Oct 20, 2021

Most-cited inventions

Patent	Title	Area	Cited by	Status
US8984214B2	Memory cell operation	Physics	19	Active
US8195899B2	Memory cell operation	Physics	8	Active
US9341596B1	Annular gas ionization delta E-E detector	Physics	8	Active
US10679683B1	Timing circuit for command path in a memory device	Emerging Cross-Sectional Technologies	7	Active
US10452319B1	Write leveling a memory device	Physics	7	Active
US10373654B1	Memory device with a signaling mechanism	Electricity	4	Active
US8402207B2	Memory cell operation	Physics	2	Active
US10664173B2	Write level initialization synchronization	Physics	2	Active
US10490241B2	DFE conditioning for write operations of a memory device	Emerging Cross-Sectional Technologies	2	Active
US10672441B2	Gap detection for consecutive write operations of a memory device	Emerging Cross-Sectional Technologies	1	Active
US10607671B2	Timing circuit for command path in a memory device	Emerging Cross-Sectional Technologies	1	Active
US10825494B2	DFE conditioning for write operations of a memory device	Emerging Cross-Sectional Technologies	1	Active
US11144241B2	Write leveling a memory device	Physics	0	Active
US10535387B2	DQS gating in a parallelizer of a memory device	Emerging Cross-Sectional Technologies	0	Active
US11456031B2	Write leveling a memory device using write DLL circuitry	Physics	0	Active
US11675541B2	Systems and methods for centralized address capture circuitry	Physics	0	Active
US11823729B2	Command clock gate implementation with chip select signal training indication	Physics	0	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.