Patent · US Active

Endpoint detection algorithm for atomic layer etching (ALE)

US10453653B2 · kind B2 · utility

3Cited by
37References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 8, 2017
Grant dateOct 22, 2019
Priority date
Expiry dateMar 8, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L22/26
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

Described herein are architectures, platforms and methods for determining endpoints of an optical emission spectroscopy (OES) data acquired from a plasma processing system. The OES data, for example, includes an absorption—step process, a desorption—step process, or a combination thereof. In this example, the OES data undergoes signal synchronization and transient signal filtering prior to endpoint determination, which may be implemented through an application of a moving average filter.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.